RN46A1(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR=22KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms, 10kOhms
Resistor - Emitter Base (R2): 22kOhms, 10kOhms
Supplier Device Package: SM6
Description: PNP + NPN BRT Q1BSR=22KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms, 10kOhms
Resistor - Emitter Base (R2): 22kOhms, 10kOhms
Supplier Device Package: SM6
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Технічний опис RN46A1(TE85L,F) Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR=22KOHM Q1BER, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V, Frequency - Transition: 200MHz, 250MHz, Resistor - Base (R1): 22kOhms, 10kOhms, Resistor - Emitter Base (R2): 22kOhms, 10kOhms, Supplier Device Package: SM6.
Інші пропозиції RN46A1(TE85L,F)
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RN46A1(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: PNP + NPN BRT Q1BSR=22KOHM Q1BER Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms, 10kOhms Resistor - Emitter Base (R2): 22kOhms, 10kOhms Supplier Device Package: SM6 |
товару немає в наявності |