RN4990FE,LXHF(CT Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 5.29 грн |
| 8000+ | 4.67 грн |
Відгуки про товар
Написати відгук
Технічний опис RN4990FE,LXHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: ES6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RN4990FE,LXHF(CT за ціною від 4.41 грн до 30.30 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RN4990FE,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
RN4990FE,LXHF(CT | Виробник : Toshiba |
Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN + PNP Q1BSR=4.7kO, VCEO=50V, IC=0.1A (SOT-563) |
на замовлення 6500 шт: термін постачання 21-30 дні (днів) |
|