на замовлення 5990 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 96.99 грн |
| 10+ | 73.86 грн |
| 100+ | 45.54 грн |
| 500+ | 36.34 грн |
| 1000+ | 32.37 грн |
| 3000+ | 29.65 грн |
| 6000+ | 27.15 грн |
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Технічний опис RQ1E070RPHZGTR ROHM Semiconductor
Description: PCH -30V -7A SMALL SIGNAL MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V.
Інші пропозиції RQ1E070RPHZGTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RQ1E070RPHZGTR | Виробник : Rohm Semiconductor |
Description: PCH -30V -7A SMALL SIGNAL MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V |
товару немає в наявності |
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RQ1E070RPHZGTR | Виробник : Rohm Semiconductor |
Description: PCH -30V -7A SMALL SIGNAL MOSFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V |
товару немає в наявності |