| Кількість | Ціна |
|---|---|
| 5+ | 79.34 грн |
| 10+ | 63.81 грн |
| 100+ | 43.18 грн |
| 500+ | 36.64 грн |
| 1000+ | 29.82 грн |
| 3000+ | 27.99 грн |
| 6000+ | 26.65 грн |
Відгуки про товар
Написати відгук
Технічний опис RQ1E100XNTR ROHM Semiconductor
Description: MOSFET N-CH 30V 10A TSMT8, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 550mW (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Інші пропозиції RQ1E100XNTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
RQ1E100XNTR | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 10A TSMT8Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 550mW (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| RQ1E100XNTR |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 10A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.