RQ3E070BNTB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A 8HSMT
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
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Технічний опис RQ3E070BNTB Rohm Semiconductor
Description: MOSFET N-CH 30V 7A 8HSMT, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSMT (3.2x3), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta).
Інші пропозиції RQ3E070BNTB за ціною від 8.76 грн до 32.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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RQ3E070BNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V |
на замовлення 7341 шт: термін постачання 21-31 дні (днів) |
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RQ3E070BNTB | ROHM Semiconductor |
MOSFET 4.5V Drive Nch MOSFET |
на замовлення 10820 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RQ3E070BNTB |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
Description: MOSFET N-CH 30V 7A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
на замовлення 7341 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 13+ | 24.68 грн |
| 100+ | 14.82 грн |
| 500+ | 12.88 грн |
| 1000+ | 8.76 грн |
| RQ3E070BNTB |
|
Виробник: ROHM Semiconductor
MOSFET 4.5V Drive Nch MOSFET
MOSFET 4.5V Drive Nch MOSFET
на замовлення 10820 шт:
термін постачання 21-30 дні (днів)