RQ3E100BNTB1 Rohm Semiconductor

Description: NCH 30V 21A POWER MOSFET: RQ3E10, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), 15W (Tc), Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSMT (3.2x3).