RQ3E110AJTB Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 30V 11A/24A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 11A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.53 грн |
| 6000+ | 16.9 грн |
| 9000+ | 15.65 грн |
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Технічний опис RQ3E110AJTB Rohm Semiconductor
Description: MOSFET N-CH 30V 11A/24A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 11A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V.
Інші пропозиції RQ3E110AJTB за ціною від 16.27 грн до 52.62 грн
| Фото | Назва | Виробник | Інформація |
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RQ3E110AJTB | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A/24A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 11A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
на замовлення 13868 шт: термін постачання 21-31 дні (днів) |
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RQ3E110AJTB | Виробник : ROHM Semiconductor |
MOSFET RQ3E110AJ is low on-resistance and Small Surface Mount Package MOSFET for switching application. |
на замовлення 2954 шт: термін постачання 21-30 дні (днів) |
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| RQ3E110AJTB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 44A; 15W; HSMT8 Case: HSMT8 Drain-source voltage: 30V Drain current: 24A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 44A Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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| RQ3E110AJTB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 44A; 15W; HSMT8 Case: HSMT8 Drain-source voltage: 30V Drain current: 24A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 44A Mounting: SMD |
товар відсутній |