RQ3L120BJFRATCB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: PCH -60V -12A, HSMT8AG, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 273µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Qualification: AEC-Q101
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Технічний опис RQ3L120BJFRATCB Rohm Semiconductor
Description: PCH -60V -12A, HSMT8AG, POWER MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 273µA, Supplier Device Package: 8-HSMT (3.2x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції RQ3L120BJFRATCB за ціною від 23.75 грн до 124.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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RQ3L120BJFRATCB | ROHM Semiconductor |
MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive |
на замовлення 2795 шт: термін постачання 21-30 дні (днів) |
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RQ3L120BJFRATCB | Rohm Semiconductor |
Description: PCH -60V -12A, HSMT8AG, POWER MO Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 273µA Supplier Device Package: 8-HSMT (3.2x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
| RQ3L120BJFRATCB |
|
Виробник: ROHM Semiconductor
MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive
MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive
на замовлення 2795 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.34 грн |
| 10+ | 68.99 грн |
| 100+ | 39.76 грн |
| 500+ | 32.58 грн |
| 1000+ | 28.93 грн |
| 3000+ | 24.51 грн |
| 6000+ | 23.75 грн |
| RQ3L120BJFRATCB |
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Виробник: Rohm Semiconductor
Description: PCH -60V -12A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 273µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Qualification: AEC-Q101
Description: PCH -60V -12A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 106mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 273µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.26 грн |
| 10+ | 73.89 грн |
| 25+ | 61.92 грн |
| 100+ | 45.40 грн |
| 250+ | 39.16 грн |
| 500+ | 35.31 грн |
| 1000+ | 31.56 грн |