RQ3P045ATTB1 ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFET RQ3P045AT is a low on-resistance MOSFET suitable for switching and load switches.
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.39 грн |
| 10+ | 96.85 грн |
| 100+ | 67.45 грн |
| 250+ | 61.79 грн |
| 500+ | 56.06 грн |
| 1000+ | 50.81 грн |
| 3000+ | 44.18 грн |
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Технічний опис RQ3P045ATTB1 ROHM Semiconductor
Description: PCH -100V -14.5A POWER MOSFET: R, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc), Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V.
Інші пропозиції RQ3P045ATTB1 за ціною від 49.33 грн до 143.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RQ3P045ATTB1 | Rohm Semiconductor |
Description: PCH -100V -14.5A POWER MOSFET: R Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc) Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V |
на замовлення 2247 шт: термін постачання 21-31 дні (днів) |
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| RQ3P045ATTB1 |
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Виробник: Rohm Semiconductor
Description: PCH -100V -14.5A POWER MOSFET: R
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V
Description: PCH -100V -14.5A POWER MOSFET: R
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 50 V
на замовлення 2247 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.68 грн |
| 10+ | 103.58 грн |
| 100+ | 71.42 грн |
| 500+ | 53.63 грн |
| 1000+ | 49.33 грн |