RQ3P270BKFRATCB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: NCH 100V 27A, HSMT8AG, POWER MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
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Технічний опис RQ3P270BKFRATCB Rohm Semiconductor
Description: NCH 100V 27A, HSMT8AG, POWER MOS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 27A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1.6mA, Supplier Device Package: 8-HSMT (3.2x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції RQ3P270BKFRATCB за ціною від 41.67 грн до 157.66 грн
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RQ3P270BKFRATCB | Rohm Semiconductor |
Description: NCH 100V 27A, HSMT8AG, POWER MOS Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 27A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.6mA Supplier Device Package: 8-HSMT (3.2x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 3475 шт: термін постачання 21-31 дні (днів) |
|
| RQ3P270BKFRATCB |
|
Виробник: Rohm Semiconductor
Description: NCH 100V 27A, HSMT8AG, POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
Description: NCH 100V 27A, HSMT8AG, POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3475 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.66 грн |
| 10+ | 94.53 грн |
| 25+ | 79.66 грн |
| 100+ | 58.93 грн |
| 250+ | 51.16 грн |
| 500+ | 46.37 грн |
| 1000+ | 41.67 грн |