RQ5E040RPTL ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFET RQ5E040RP is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for DC/DC converters.
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.21 грн |
| 10+ | 42.71 грн |
| 100+ | 28.51 грн |
| 500+ | 22.51 грн |
| 1000+ | 18.02 грн |
| 3000+ | 16.36 грн |
| 9000+ | 16.02 грн |
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Технічний опис RQ5E040RPTL ROHM Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSMT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Інші пропозиції RQ5E040RPTL за ціною від 17.59 грн до 68.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RQ5E040RPTL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
на замовлення 1370 шт: термін постачання 21-31 дні (днів) |
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| RQ5E040RPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Description: MOSFET P-CH 30V 4A TSMT3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
на замовлення 1370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.34 грн |
| 10+ | 41.13 грн |
| 100+ | 26.87 грн |
| 500+ | 19.45 грн |
| 1000+ | 17.59 грн |