RQ6E040XNTCR Rohm Semiconductor

Description: MOSFET N-CH 30V 4A TSMT6, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).