RQ6E040XNTCR ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFET RQ6E040XN is the low on-resistance MOSFET, built-in G-S protection diode for switching application.
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.17 грн |
| 10+ | 37.47 грн |
| 100+ | 24.37 грн |
| 500+ | 19.12 грн |
| 1000+ | 14.77 грн |
| 3000+ | 13.19 грн |
| 6000+ | 12.36 грн |
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Технічний опис RQ6E040XNTCR ROHM Semiconductor
Description: MOSFET N-CH 30V 4A TSMT6, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції RQ6E040XNTCR за ціною від 15.01 грн до 51.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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RQ6E040XNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT6 Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 2789 шт: термін постачання 21-31 дні (днів) |
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| RQ6E040XNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 30V 4A TSMT6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 2789 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.26 грн |
| 10+ | 34.78 грн |
| 100+ | 23.21 грн |
| 500+ | 16.66 грн |
| 1000+ | 15.01 грн |