RQ6E080AJTCR ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFET RQ6E080AJ is low on - resistance and small surface mount package MOSFET for switching application.
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.65 грн |
| 10+ | 58.83 грн |
| 100+ | 39.21 грн |
| 500+ | 31.00 грн |
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Технічний опис RQ6E080AJTCR ROHM Semiconductor
Description: MOSFET N-CH 30V 8A TSMT6, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 1.5V @ 2mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції RQ6E080AJTCR за ціною від 23.06 грн до 79.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RQ6E080AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 8A TSMT6 Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 2mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 728 шт: термін постачання 21-31 дні (днів) |
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| RQ6E080AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 8A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 8A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.99 грн |
| 10+ | 48.09 грн |
| 100+ | 31.65 грн |
| 500+ | 23.06 грн |