RQ7E100ATTCR ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -10.0A(Id), (4.5V, 6.0V Drive)
| Кількість | Ціна |
|---|---|
| 3+ | 141.98 грн |
| 10+ | 89.57 грн |
| 100+ | 52.23 грн |
| 500+ | 41.38 грн |
| 1000+ | 37.90 грн |
| 3000+ | 34.01 грн |
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Технічний опис RQ7E100ATTCR ROHM Semiconductor
Description: MOSFET P-CH 30V 10A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V.
Інші пропозиції RQ7E100ATTCR за ціною від 40.43 грн до 143.95 грн
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RQ7E100ATTCR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 30V 10A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V |
на замовлення 2378 шт: термін постачання 21-31 дні (днів) |
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RQ7E100ATTCR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 30V 10A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V |
товару немає в наявності |