Технічний опис RQA0009TXDQS#H1 Renesas
Description: MOSFET N-CH 16V 3.2A UPAK, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 800mV @ 1mA, Supplier Device Package: UPAK, Part Status: Obsolete, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 16 V, Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V.
Інші пропозиції RQA0009TXDQS#H1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| RQA0009TXDQS#H1 | Renesas Electronics Corporation |
 Description: MOSFET N-CH 16V 3.2A UPAKPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: UPAK Part Status: Obsolete Vgs (Max): ±5V Drain to Source Voltage (Vdss): 16 V Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| RQA0009TXDQS#H1 | Renesas Electronics |
Renesas Electronics |
товару немає в наявності |
В кошику од. на суму грн. |
| RQA0009TXDQS#H1 |
|
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 16V 3.2A UPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: UPAK
Part Status: Obsolete
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V
Description: MOSFET N-CH 16V 3.2A UPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: UPAK
Part Status: Obsolete
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V
товару немає в наявності
В кошику
од. на суму грн.
| RQA0009TXDQS#H1 |
|
Виробник: Renesas Electronics
Renesas Electronics
Renesas Electronics
товару немає в наявності
В кошику
од. на суму грн.