RQJ0303PGDQA#H6 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 3.3A 3MPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 68mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 3-MPAK
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Технічний опис RQJ0303PGDQA#H6 Renesas Electronics Corporation
Description: MOSFET P-CH 30V 3.3A 3MPAK, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +10V, -20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 68mOhm @ 1.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Power Dissipation (Max): 800mW (Ta), Supplier Device Package: 3-MPAK.
Інші пропозиції RQJ0303PGDQA#H6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RQJ0303PGDQA#H6 | Виробник : Renesas Electronics |
MOSFET Power MOSFET- Lead Free, Halogen Free |
товару немає в наявності |