RRH050P03GZETB Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 80.38 грн |
| 10+ | 51.81 грн |
| 100+ | 35.89 грн |
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Технічний опис RRH050P03GZETB Rohm Semiconductor
Description: MOSFET P-CH 30V 5A 8SOIC, Packaging: Cut Tape (CT), Part Status: Active, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V.
Інші пропозиції RRH050P03GZETB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RRH050P03GZETB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
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RRH050P03GZETB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |