RRH050P03TB1 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 2491 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.3 грн |
| 10+ | 56.45 грн |
| 100+ | 43.99 грн |
| 500+ | 34.1 грн |
| 1000+ | 26.92 грн |
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Технічний опис RRH050P03TB1 Rohm Semiconductor
Description: MOSFET P-CH 30V 5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V.
Інші пропозиції RRH050P03TB1 за ціною від 21.23 грн до 66.23 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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RRH050P03TB1 | Виробник : ROHM Semiconductor |
MOSFET Pch -30V -5A MOSFET |
на замовлення 681 шт: термін постачання 21-30 дні (днів) |
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RRH050P03TB1 | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 30V 5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
товар відсутній |