Продукція > ROHM SEMICONDUCTOR > RRH100P03TB1

RRH100P03TB1 ROHM Semiconductor

Name: RRH100P03TB1
Brand: ROHM Semiconductor
SKU: 147260-4
Price: 390.4500000000001 UAH
Availability: InStock

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Виробник: ROHM Semiconductor
MOSFETs Pch -30V -10A MOSFET

на замовлення 2199 шт:

термін постачання 21-30 дні (днів)

Кількість	Ціна
3+	130.15 грн
10+	106.34 грн
100+	74.12 грн
250+	68.55 грн
500+	62.16 грн
1000+	53.28 грн
2500+	49.03 грн

Мінімальне замовлення: 3

В кошику од. на суму грн.

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Технічний опис RRH100P03TB1 ROHM Semiconductor

Description: MOSFET P-CH 30V 10A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V.

Інші пропозиції RRH100P03TB1

Назва	Виробник	Інформація	Доступність	Ціна
RRH100P03TB1	Виробник : ROHM SEMICONDUCTOR	Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD Polarisation: unipolar Case: SOP8 Kind of package: reel; tape Version: ESD Gate charge: 68nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Type of transistor: P-MOSFET On-state resistance: 12.6mΩ Drain current: -10A Drain-source voltage: -30V Power dissipation: 2W Mounting: SMD кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
RRH100P03TB1	Виробник : Rohm Semiconductor	Description: MOSFET P-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V	товару немає в наявності	В кошику од. на суму грн.
RRH100P03TB1	Виробник : Rohm Semiconductor	Description: MOSFET P-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V	товару немає в наявності	В кошику од. на суму грн.
RRH100P03TB1	Виробник : ROHM SEMICONDUCTOR	Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD Polarisation: unipolar Case: SOP8 Kind of package: reel; tape Version: ESD Gate charge: 68nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Type of transistor: P-MOSFET On-state resistance: 12.6mΩ Drain current: -10A Drain-source voltage: -30V Power dissipation: 2W Mounting: SMD	товару немає в наявності	В кошику од. на суму грн.