RRS090N03FU7TB1
Виробник:
на замовлення 3000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис RRS090N03FU7TB1
Description: MOSFET N-CH 30V 9A 8SOP, Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta).
Інші пропозиції RRS090N03FU7TB1
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT |
|---|---|---|---|---|---|
 |
RRS090N03FU7TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 9A 8SOP Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) |
товару немає в наявності |
В кошику од. на суму грн. |
| RRS090N03FU7TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Description: MOSFET N-CH 30V 9A 8SOP
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
товару немає в наявності
В кошику
од. на суму грн.