RS1E240BNTB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 24A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис RS1E240BNTB Rohm Semiconductor
Description: MOSFET N-CH 30V 24A 8HSOP, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції RS1E240BNTB за ціною від 16.08 грн до 82.96 грн
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RS1E240BNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 24A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 24A, 10V Power Dissipation (Max): 3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
на замовлення 4888 шт: термін постачання 21-31 дні (днів) |
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RS1E240BNTB | ROHM Semiconductor |
MOSFETs 4.5V Drive Nch MOSFET |
на замовлення 6939 шт: термін постачання 21-30 дні (днів) |
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| RS1E240BNTB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 24A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
на замовлення 4888 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 53.59 грн |
| 10+ | 41.66 грн |
| 100+ | 29.96 грн |
| 500+ | 23.00 грн |
| 1000+ | 20.89 грн |
| RS1E240BNTB |
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Виробник: ROHM Semiconductor
MOSFETs 4.5V Drive Nch MOSFET
MOSFETs 4.5V Drive Nch MOSFET
на замовлення 6939 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 82.96 грн |
| 10+ | 51.44 грн |
| 100+ | 29.34 грн |
| 500+ | 22.71 грн |
| 1000+ | 20.57 грн |
| 2500+ | 18.29 грн |
| 5000+ | 16.08 грн |