RS1E280BNTB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис RS1E280BNTB Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції RS1E280BNTB за ціною від 20.71 грн до 89.31 грн
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RS1E280BNTB | ROHM Semiconductor |
MOSFETs 4.5V Drive Nch MOSFET |
на замовлення 8446 шт: термін постачання 21-30 дні (днів) |
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RS1E280BNTB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 28A 8HSOP Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4683 шт: термін постачання 21-31 дні (днів) |
|
| RS1E280BNTB |
|
Виробник: ROHM Semiconductor
MOSFETs 4.5V Drive Nch MOSFET
MOSFETs 4.5V Drive Nch MOSFET
на замовлення 8446 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 84.57 грн |
| 10+ | 61.45 грн |
| 100+ | 35.69 грн |
| 500+ | 28.37 грн |
| 1000+ | 25.40 грн |
| 2500+ | 22.16 грн |
| 5000+ | 20.71 грн |
| RS1E280BNTB |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 28A 8HSOP
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4683 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 89.31 грн |
| 10+ | 54.15 грн |
| 100+ | 35.79 грн |
| 500+ | 26.19 грн |
| 1000+ | 23.82 грн |