на замовлення 2168 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.08 грн |
| 10+ | 62.85 грн |
| 100+ | 39.52 грн |
| 500+ | 34.24 грн |
| 1000+ | 31.05 грн |
| 2500+ | 26.24 грн |
| 5000+ | 25.15 грн |
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Технічний опис RS1E280GNTB ROHM Semiconductor
Description: MOSFET N-CH 30V 28A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V, Power Dissipation (Max): 3W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V.
Інші пропозиції RS1E280GNTB за ціною від 44.87 грн до 110.85 грн
| Фото | Назва | Виробник | Інформація |
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RS1E280GNTB | Виробник : Rohm Semiconductor |
 Description: MOSFET N-CH 30V 28A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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RS1E280GNTB | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 28A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 202 шт: термін постачання 21-31 дні (днів) |
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RS1E280GNTB | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 28A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
товару немає в наявності |
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| RS1E280GNTB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 31W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |