RS1E321GNTB1 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 30V 32A/80A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 73.51 грн |
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Технічний опис RS1E321GNTB1 Rohm Semiconductor
Description: MOSFET N-CH 30V 32A/80A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 32A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V.
Інші пропозиції RS1E321GNTB1 за ціною від 72.97 грн до 194.73 грн
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RS1E321GNTB1 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 32A/80A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 32A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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RS1E321GNTB1 | Виробник : ROHM Semiconductor |
MOSFETs RS1E321GN is a power MOSFET with low-on resistance and High power package, suitable for switching. |
на замовлення 2472 шт: термін постачання 21-30 дні (днів) |
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| RS1E321GNTB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 42.8nC On-state resistance: 2.9mΩ Power dissipation: 34W Drain current: 80A Pulsed drain current: 128A |
товару немає в наявності |