| Кількість | Ціна |
|---|---|
| 2+ | 226.32 грн |
| 10+ | 163.54 грн |
| 100+ | 111.14 грн |
| 500+ | 97.34 грн |
| 1000+ | 84.22 грн |
| 2500+ | 79.39 грн |
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Технічний опис RS1E350BNTB1 ROHM Semiconductor
Description: NCH 30V 80A POWER MOSFET: RS1E35, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції RS1E350BNTB1 за ціною від 94.42 грн до 251.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS1E350BNTB1 | Rohm Semiconductor |
 Description: NCH 30V 80A POWER MOSFET: RS1E35Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V |
на замовлення 2217 шт: термін постачання 21-31 дні (днів) |
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| RS1E350BNTB1 |
|
Виробник: Rohm Semiconductor
Description: NCH 30V 80A POWER MOSFET: RS1E35
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
Description: NCH 30V 80A POWER MOSFET: RS1E35
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
на замовлення 2217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 251.63 грн |
| 10+ | 162.51 грн |
| 100+ | 121.67 грн |
| 500+ | 99.06 грн |
| 1000+ | 94.42 грн |