RS1FLG-M3/H Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.12 грн |
| 6000+ | 2.87 грн |
| 9000+ | 2.73 грн |
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Технічний опис RS1FLG-M3/H Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB, Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Інші пропозиції RS1FLG-M3/H за ціною від 4.77 грн до 25.14 грн
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RS1FLG-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO219AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB |
на замовлення 14670 шт: термін постачання 21-31 дні (днів) |
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| RS1FLG-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
на замовлення 14670 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.14 грн |
| 19+ | 16.64 грн |
| 100+ | 8.40 грн |
| 500+ | 6.42 грн |
| 1000+ | 4.77 грн |