RS1G260MNTB Rohm Semiconductor
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 170+ | 72.16 грн |
| 177+ | 68.94 грн |
| 250+ | 66.17 грн |
| 500+ | 61.50 грн |
| 1000+ | 55.09 грн |
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Технічний опис RS1G260MNTB Rohm Semiconductor
Description: MOSFET N-CH 40V 26A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V, Power Dissipation (Max): 3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V.
Інші пропозиції RS1G260MNTB за ціною від 59.01 грн до 210.09 грн
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RS1G260MNTB | Виробник : ROHM Semiconductor |
 MOSFETs 4.5V Drive Nch MOSFET |
на замовлення 2459 шт: термін постачання 21-30 дні (днів) |
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RS1G260MNTB | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 40V 26A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V |
на замовлення 2288 шт: термін постачання 21-31 дні (днів) |
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| RS1G260MNTB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 104A Drain-source voltage: 40V Drain current: 80A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V кількість в упаковці: 2500 шт |
товару немає в наявності |
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RS1G260MNTB | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 40V 26A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2988 pF @ 20 V |
товару немає в наявності |
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| RS1G260MNTB | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Pulsed drain current: 104A Drain-source voltage: 40V Drain current: 80A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |