Технічний опис RS1JL R3G Taiwan Semiconductor
Description: DIODE STD 600V 800MA SUB SMA, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Sub SMA, Current - Average Rectified (Io): 800mA, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 250 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Інші пропозиції RS1JL R3G за ціною від 31.72 грн до 53.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
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RS1JL R3G | Taiwan Semiconductor Corporation |
Description: DIODE STD 600V 800MA SUB SMAVoltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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RS1JL R3G | Taiwan Semiconductor |
Diode Switching 600V 0.8A 2-Pin Sub SMA T/R |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| RS1JL R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 600V 800MA SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STD 600V 800MA SUB SMA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.35 грн |
| 10+ | 31.72 грн |
| RS1JL R3G |
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Виробник: Taiwan Semiconductor
Diode Switching 600V 0.8A 2-Pin Sub SMA T/R
Diode Switching 600V 0.8A 2-Pin Sub SMA T/R
на замовлення 1 шт:
термін постачання 21-31 дні (днів)



