RS2AHE3_A/H Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 10+ | 33.25 грн |
| 12+ | 28.20 грн |
| 100+ | 17.07 грн |
| 500+ | 13.31 грн |
| 750+ | 10.73 грн |
| 3000+ | 9.13 грн |
| 10500+ | 8.50 грн |
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Технічний опис RS2AHE3_A/H Vishay General Semiconductor
Description: DIODE GEN PURP 50V 1.5A DO214AA, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 50 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 1.5A.
Інші пропозиції RS2AHE3_A/H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RS2AHE3_A/H | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 50V 1.5A DO214AACapacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 50 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1.5A |
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