RS3A-E3/57T Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 5+ | 68.52 грн |
| 10+ | 41.42 грн |
| 100+ | 24.59 грн |
| 500+ | 19.37 грн |
| 850+ | 11.36 грн |
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Технічний опис RS3A-E3/57T Vishay General Semiconductor
Description: DIODE GEN PURP 50V 3A DO214AB, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 44pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Інші пропозиції RS3A-E3/57T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RS3A-E3/57T | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 50V 3A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 44pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
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