Технічний опис RS3DHE3_A/I Vishay
Description: DIODE GEN PURP 200V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 44pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Інші пропозиції RS3DHE3_A/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RS3DHE3_A/I | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 44pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
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RS3DHE3_A/I | Виробник : Vishay General Semiconductor |
Rectifiers 200 Volt 3.0A 150ns 100 Amp IFSM |
товару немає в наявності |