RS3E075ATTB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 27.20 грн |
| 5000+ | 24.38 грн |
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Технічний опис RS3E075ATTB Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP-J, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V.
Інші пропозиції RS3E075ATTB за ціною від 19.54 грн до 96.65 грн
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RS3E075ATTB | Rohm Semiconductor |
Description: MOSFET P-CH 30V 8SOP Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 8-SOP-J Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 11173 шт: термін постачання 21-31 дні (днів) |
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RS3E075ATTB | ROHM Semiconductor |
MOSFETs Pch -30V -7.5A Middle Power |
на замовлення 7098 шт: термін постачання 21-30 дні (днів) |
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| RS3E075ATTB |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP-J
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP-J
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 11173 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.67 грн |
| 10+ | 59.61 грн |
| 100+ | 45.69 грн |
| 500+ | 33.90 грн |
| 1000+ | 27.12 грн |
| RS3E075ATTB |
|
Виробник: ROHM Semiconductor
MOSFETs Pch -30V -7.5A Middle Power
MOSFETs Pch -30V -7.5A Middle Power
на замовлення 7098 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.65 грн |
| 10+ | 59.46 грн |
| 100+ | 34.17 грн |
| 500+ | 26.65 грн |
| 1000+ | 24.23 грн |
| 2500+ | 21.06 грн |
| 5000+ | 19.54 грн |