RS3E180ATTB1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
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Технічний опис RS3E180ATTB1 Rohm Semiconductor
Description: ROHM - RS3E180ATTB1 - Leistungs-MOSFET, p-Kanal, 30 V, 18 A, 0.0041 ohm, SOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30, Dauer-Drainstrom Id: 18, hazardous: false, Qualifikation: -, MSL: -, usEccn: EAR99, Verlustleistung Pd: 2, Gate-Source-Schwellenspannung, max.: 2.5, euEccn: NLR, Verlustleistung: 2, Bauform - Transistor: SOP, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8, Produktpalette: -, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 0.0041, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0041, SVHC: Lead (10-Jun-2022).
Інші пропозиції RS3E180ATTB1 за ціною від 83.46 грн до 216.97 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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RS3E180ATTB1 | Rohm Semiconductor |
Description: MOSFET P-CH 30V 18A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V |
на замовлення 2716 шт: термін постачання 21-31 дні (днів) |
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RS3E180ATTB1 | ROHM Semiconductor |
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -18.0A(Id), (4.5V, 6.0V Drive) |
на замовлення 1295 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RS3E180ATTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 18A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Description: MOSFET P-CH 30V 18A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
на замовлення 2716 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 216.97 грн |
| 10+ | 147.60 грн |
| 100+ | 102.83 грн |
| 500+ | 83.46 грн |
| RS3E180ATTB1 |
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Виробник: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -18.0A(Id), (4.5V, 6.0V Drive)
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -18.0A(Id), (4.5V, 6.0V Drive)
на замовлення 1295 шт:
термін постачання 21-30 дні (днів)

