RS3L110ATTB1 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: PCH -60V -11A POWER MOSFET - RS3
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 11A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 74.27 грн |
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Технічний опис RS3L110ATTB1 Rohm Semiconductor
Description: PCH -60V -11A POWER MOSFET - RS3, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 12.8mOhm @ 11A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 30 V.
Інші пропозиції RS3L110ATTB1 за ціною від 68.67 грн до 178.74 грн
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RS3L110ATTB1 | Виробник : Rohm Semiconductor |
Description: PCH -60V -11A POWER MOSFET - RS3 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 11A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RS3L110ATTB1 | Виробник : ROHM Semiconductor |
MOSFET Pch -60V -11A Power MOSFET |
на замовлення 4771 шт: термін постачання 21-30 дні (днів) |
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RS3L110ATTB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Pulsed drain current: -44A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14.3mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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RS3L110ATTB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Pulsed drain current: -44A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14.3mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |