| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.79 грн |
| 10+ | 133.37 грн |
| 100+ | 80.08 грн |
| 500+ | 66.48 грн |
| 1000+ | 64.13 грн |
| 2500+ | 56.54 грн |
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Технічний опис RS6P060BHTB1 ROHM Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V, Power Dissipation (Max): 3W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V.
Інші пропозиції RS6P060BHTB1 за ціною від 66.81 грн до 212.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS6P060BHTB1 | Rohm Semiconductor |
 Description: NCH 100V 60A, HSOP8, POWER MOSFEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V |
на замовлення 2142 шт: термін постачання 21-31 дні (днів) |
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| RS6P060BHTB1 |
|
Виробник: Rohm Semiconductor
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
Description: NCH 100V 60A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 50 V
на замовлення 2142 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.02 грн |
| 10+ | 132.22 грн |
| 100+ | 91.35 грн |
| 500+ | 69.34 грн |
| 1000+ | 66.81 грн |