RS6P100BGTB1 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 70.21 грн |
Відгуки про товар
Написати відгук
Технічний опис RS6P100BGTB1 Rohm Semiconductor
Description: NCH 100V 100A, HSOP8, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V, Power Dissipation (Max): 3W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V.
Інші пропозиції RS6P100BGTB1 за ціною від 73.35 грн до 227.20 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RS6P100BGTB1 | Виробник : Rohm Semiconductor |
Description: NCH 100V 100A, HSOP8, POWER MOSF Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
RS6P100BGTB1 | Виробник : ROHM Semiconductor |
MOSFETs Discrete Semiconductors, MOSFETs, Nch 100V 100A, HSOP8, Power MOSFET |
товару немає в наявності |