RS6P100BHTB1 Rohm Semiconductor

Description: NCH 100V 100A, HSOP8, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 50 V.