RS6R035BHTB1 Rohm Semiconductor

Description: NCH 150V 35A, HSOP8, POWER MOSFE, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 3W (Ta), 73W (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).