Технічний опис RSD046P05 TL ROHM
Description: MOSFET P-CH 45V 4.5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V, Power Dissipation (Max): 850mW (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: CPT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V.
Інші пропозиції RSD046P05 TL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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RSD046P05TL | Rohm Semiconductor |
 Description: MOSFET P-CH 45V 4.5A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V Power Dissipation (Max): 850mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
RSD046P05TL | Rohm Semiconductor |
Description: MOSFET P-CH 45V 4.5A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V Power Dissipation (Max): 850mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
RSD046P05TL | ROHM Semiconductor |
MOSFET 4V Drive Pch MOSFET Drive Pch |
товару немає в наявності |
В кошику од. на суму грн. |
| RSD046P05TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 4.5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V
Power Dissipation (Max): 850mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: MOSFET P-CH 45V 4.5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V
Power Dissipation (Max): 850mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RSD046P05TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 4.5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V
Power Dissipation (Max): 850mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: MOSFET P-CH 45V 4.5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V
Power Dissipation (Max): 850mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RSD046P05TL |
|
Виробник: ROHM Semiconductor
MOSFET 4V Drive Pch MOSFET Drive Pch
MOSFET 4V Drive Pch MOSFET Drive Pch
товару немає в наявності
В кошику
од. на суму грн.