RSD140P06TL Rohm Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 223+ | 63.59 грн |
| 250+ | 61.04 грн |
| 500+ | 58.84 грн |
| 1000+ | 54.88 грн |
| 2500+ | 49.32 грн |
| 5000+ | 46.08 грн |
| 10000+ | 44.94 грн |
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Технічний опис RSD140P06TL Rohm Semiconductor
Description: MOSFET P-CH 60V 14A CPT3, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Not For New Designs, Supplier Device Package: CPT3, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції RSD140P06TL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
RSD140P06TL | Rohm Semiconductor |
 Description: MOSFET P-CH 60V 14A CPT3Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Not For New Designs Supplier Device Package: CPT3 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
RSD140P06TL | ROHM Semiconductor |
MOSFET Trans MOSFET P-CH 60V 14A |
товару немає в наявності |
В кошику од. на суму грн. |
| RSD140P06TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 60V 14A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 14A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RSD140P06TL |
|
Виробник: ROHM Semiconductor
MOSFET Trans MOSFET P-CH 60V 14A
MOSFET Trans MOSFET P-CH 60V 14A
товару немає в наявності
В кошику
од. на суму грн.