| Кількість | Ціна |
|---|---|
| 1+ | 332.29 грн |
| 10+ | 222.40 грн |
| 25+ | 182.14 грн |
| 100+ | 151.90 грн |
| 500+ | 125.18 грн |
| 1000+ | 116.74 грн |
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Технічний опис RSJ400N10TL ROHM Semiconductor
Description: MOSFET N-CH 100V 40A LPTS, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.35W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції RSJ400N10TL за ціною від 218.27 грн до 341.78 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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RSJ400N10TL | Rohm Semiconductor |
 Description: MOSFET N-CH 100V 40A LPTSVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
|
| RSJ400N10TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 40A LPTS
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 40A LPTS
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 341.78 грн |
| 10+ | 218.27 грн |