RSJ550N10TL Rohm Semiconductor

Description: MOSFET N-CH 100V 55A LPTS, Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).