RSQ015P10HZGTR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 19.98 грн |
| 6000+ | 19.13 грн |
| 9000+ | 18.36 грн |
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Технічний опис RSQ015P10HZGTR Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel.
Інші пропозиції RSQ015P10HZGTR за ціною від 17.60 грн до 53.59 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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RSQ015P10HZGTR | ROHM Semiconductor |
MOSFETs Pch -100V -1.5A Small Signal MOSFET for Automotive. RSQ015P10HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications. |
на замовлення 5194 шт: термін постачання 21-30 дні (днів) |
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RSQ015P10HZGTR | Rohm Semiconductor |
Description: MOSFET P-CH 100V 1.5A TSMT6 Qualification: AEC-Q101 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Grade: Automotive Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT6 (SC-95) |
на замовлення 17270 шт: термін постачання 21-31 дні (днів) |
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| RSQ015P10HZGTR |
|
Виробник: ROHM Semiconductor
MOSFETs Pch -100V -1.5A Small Signal MOSFET for Automotive. RSQ015P10HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications.
MOSFETs Pch -100V -1.5A Small Signal MOSFET for Automotive. RSQ015P10HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications.
на замовлення 5194 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.83 грн |
| 10+ | 51.84 грн |
| 100+ | 30.17 грн |
| 500+ | 23.61 грн |
| 1000+ | 21.61 грн |
| 3000+ | 17.60 грн |
| RSQ015P10HZGTR |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Description: MOSFET P-CH 100V 1.5A TSMT6
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
на замовлення 17270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.59 грн |
| 10+ | 51.38 грн |
| 100+ | 34.44 грн |
| 500+ | 25.29 грн |
| 1000+ | 23.12 грн |