RSR010N10TL Rohm Semiconductor

Description: MOSFET N-CH 100V 1A TSMT3, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSMT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 540mW (Ta), Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).