RSR025N03HZGTL ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.48 грн |
| 10+ | 32.95 грн |
| 100+ | 21.06 грн |
| 500+ | 16.78 грн |
| 1000+ | 15.12 грн |
| 3000+ | 12.43 грн |
| 6000+ | 12.22 грн |
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Технічний опис RSR025N03HZGTL ROHM Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3, Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TSMT3, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Інші пропозиції RSR025N03HZGTL за ціною від 17.10 грн до 59.80 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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RSR025N03HZGTL | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 2.5A TSMT3Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Drain to Source Voltage (Vdss): 30 V |
на замовлення 1923 шт: термін постачання 21-31 дні (днів) |
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| RSR025N03HZGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 2.5A TSMT3
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
на замовлення 1923 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.80 грн |
| 10+ | 39.94 грн |
| 100+ | 26.30 грн |
| 500+ | 18.95 грн |
| 1000+ | 17.10 грн |