RSR030N06HZGTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 20.59 грн |
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Технічний опис RSR030N06HZGTL Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції RSR030N06HZGTL за ціною від 14.87 грн до 92.70 грн
| Фото | Назва | Виробник | Інформація |
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RSR030N06HZGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2194 шт: термін постачання 21-30 дні (днів) |
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RSR030N06HZGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2194 шт: термін постачання 14-21 дні (днів) |
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RSR030N06HZGTL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 60V 3A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 6661 шт: термін постачання 21-31 дні (днів) |
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RSR030N06HZGTL | Виробник : ROHM Semiconductor |
MOSFETs Automotive Nch 60V 3A Small Signal MOSFET. RSR030N06HZG is a MOSFET for DC-DC Converters. This is a high-reliability product of automotive grade qualified to AEC-Q101. |
на замовлення 1584 шт: термін постачання 21-30 дні (днів) |
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