RSS085N05FU6TB Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 45V 8.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
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Технічний опис RSS085N05FU6TB Rohm Semiconductor
Description: MOSFET N-CH 45V 8.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V, Power Dissipation (Max): 2W (Ta), Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V.
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RSS085N05FU6TB | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 45V 8.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V |
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RSS085N05FU6TB | Виробник : ROHM Semiconductor |
MOSFETs RECOMMENDED ALT 755-RSH070N05GZETB |
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