RSS090N03FRATB ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.44 грн |
| 10+ | 142.90 грн |
| 100+ | 85.60 грн |
Відгуки про товар
Написати відгук
Технічний опис RSS090N03FRATB ROHM Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції RSS090N03FRATB
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
RSS090N03FRATB | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 9A 8SOPQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
|
RSS090N03FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 9A 8SOP Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
RSS090N03FRATB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A |
товару немає в наявності |
В кошику од. на суму грн. |
| RSS090N03FRATB |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RSS090N03FRATB |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 9A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RSS090N03FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
товару немає в наявності
В кошику
од. на суму грн.