RSS090N03FU6TB

Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

Виробник: ROHM Semiconductor
MOSFETs 30V 9A N CHANNEL