Технічний опис RTF015N03 TL ROHM
Description: MOSFET N-CH 30V 1.5A TUMT3, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Not For New Designs, Supplier Device Package: TUMT3, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 320mW (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції RTF015N03 TL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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RTF015N03TL | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 1.5A TUMT3Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TUMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
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RTF015N03TL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 1.5A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
RTF015N03TL | ROHM Semiconductor |
MOSFETs N-CH 30V 1.5A TUMT3 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| RTF015N03TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 1.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RTF015N03TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Description: MOSFET N-CH 30V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RTF015N03TL |
|
Виробник: ROHM Semiconductor
MOSFETs N-CH 30V 1.5A TUMT3
MOSFETs N-CH 30V 1.5A TUMT3
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.